10 Aug The Ebers-Moll Model is an electronic representation of a transistor, either NPN or PNP, in any of the four fundamental configurations. Figure: The Ebers-Moll Model of an n-p-n Bipolar Junction Transistor Two dependent current sources are used to indicate the interaction of the junctions. The PNP Bipolar Transistor block uses a variant of the Ebers-Moll equations to represent an PNP bipolar transistor.

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The above ebers moll model of transistor are derived based on the assumption of low level minority carrier injection the hole concentration injected into the base is very much less compared to the intrinsic electron concentration in basein such a case emitter or collector current is mainly dominated by diffusion currents, drift current is negligible compared to drift currents.

The automated translation of this page is moedl by a general purpose third party translator tool. For a figure describing forward and reverse bias, see semiconductor diodes. Radiation causes a buildup of ‘defects’ in the base region that act as recombination centers.

Ebers Moll Model of a Bipolar Transistor – Electronics Area

The collector—base junction is reverse biased in normal operation. Most of the current is mpll by electrons moving from emitter to collector as minority carriers in the P-type base region. The default value trajsistor This is the default method. The BJT remains a device that excels in some applications, such as discrete circuit design, due to the very wide selection of BJT types available, and because of its high transconductance and output resistance compared to MOSFETs.

Transistor modeling Transistor types Bipolar ebers moll model of transistor. For a diode with voltage V applied between its terminals, the current flowing through the junction in terms of applied voltage between its terminals is given by.


In the active mode of operation, electrons are injected from the forward biased n-type emitter region into the p-type base where they diffuse as minority carriers to the ebers moll model of transistor n-type collector and are swept away by the electric field in the reverse-biased collector—base junction.

BJTs can be thought of as voltage-controlled current sourcesbut are more simply characterized as current-controlled current sources, or current amplifiers, due to the low impedance at the base. The [ Vbe Ib ] data pair must be quoted for when the transistor is in the normal active region, that is, not in the saturated region. Transistors can be thought of as two diodes P—N junctions sharing a common region that minority carriers can move through.

This page was last edited on 7 Julyat In addition to normal breakdown ratings of the device, power BJTs are ebers moll model of transistor to a failure mode called secondary breakdownin which excessive current and normal imperfections in the silicon die cause portions of the silicon inside the device to become disproportionately hotter than the others.

In this “on” state, trajsistor flows from the collector to the emitter of the transistor. Now coming to important question of Why two back to back diodes egers function as a transistor? ebers moll model of transistor

Ebers-moll model of transistor

Dbers result is that the transistor makes a good switch that is controlled by its base input. A significant minority are also now made from gallium arsenideespecially for very high speed applications see HBT, below.

Zero bias base resistance RB Resistance at the base at zero bias. When a transistor is used at higher frequencies, the fundamental limitation is the time it takes the carriers to diffuse across the base region Please help improve it ebees make it understandable ebers moll model of transistor non-expertswithout removing the technical details.


A Baker clamp can prevent the transistor ebrrs heavily saturating, which reduces the amount of charge stored in the base and thus improves switching time.

It is ebers moll model of transistor than unity due to recombination of charge carriers as they cross the base region. When the base—collector voltage reaches a certain device-specific value, the base—collector depletion region boundary meets the base—emitter depletion region boundary.

Base-emitter junction capacitance Parasitic capacitance across the base-emitter junction. Transistor Manual 6th ed.

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Translated by Mouseover text to see original. Derivative of the collector current with respect to the collector-emitter voltage for a fixed base current.

The default value is 1e A. These electrons diffuse through the base from the region of high concentration near the emitter toward the region of low concentration near the collector. The collector and base currents are [1]: It is this gain that allows BJTs to be used as the building ebers moll model of transistor of electronic amplifiers.

When the value is not known and the transistor is not to be operated on the inverse ebers moll model of transistor, use the default value of 1. For this the h oe and h re parameters are neglected that is, they are set to infinity and zero, respectively.